(notice) ?n the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that may occur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the latest device specification sheets before using any sharp device. ?pecifications are subject to change without notice for improvement. (internet) ?ata for sharp's optoelectronic is provided on internet. (address http://sharp-world.com/ecg/) g1-010103-b as of february 2002 features applications absolute maximum ratings outline dimensions under development new product GM4JV81200AE series chip led (1) 4-element, high-luminosity side emitting chip led (2) external dimensions: 1.6 1.15 0.8 t mm, thin type (3) comes in 3 colors (4) taped product (4 000 pcs/reel) (1) lcd backlight for cellular phone (2) lcd backlight for various portable equipment high-luminosity side emitting chip led 1/1 (unit : mm) 1 2 12 device center soldering area recommended pwb pattern for soldering 1. plated area 2. pin connections 1 cathode 2 anode 3. unspecified tolerance: 0.1 gm4jj81200ae gm4js81200ae GM4JV81200AE gm4jj81200ae gm4js81200ae GM4JV81200AE algainp on gaas algainp on gaas algainp on gaas 20 20 20 290 290 290 40 40 40 5 5 5 -30 to +85 -40 to +100 -40 to +100 -40 to +100 -30 to +85 -30 to +85 2.0 2.0 2.0 627 609 591 618 605 588 45 45 35 model no. emitting color material forward current i f (ma) peak forward current i fm *1 (ma) operating temperature t opr storage temperature t stg (?c) (?c) soldering temperature t sol *2 (?c) (ta=25?c) (i f =10ma,ta=25?c) reverse voltage v r (v) orange amber sunset-orange *1 duty ratio=1/10, pulse width=0.1ms *2 for 3s or less at the temperature of hand soldering. electro-optical characteristics model no. lens type forward voltage v f (v) p (nm) typ i v (mcd) typ peak emission wavelength d (nm) typ dominant wavelength luminous intensity typ colorless transparency 1.6 0.15 1.15 0.68 0.8 0.15 1.2 1.0 1.2 1.2 0.9 1.2
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